RJH1CV5DPK
RJH1CV5DPK is manufactured by Renesas.
Preliminary Datasheet
1200V
- 25A
- IGBT Application: Inverter
Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
- Built-in fast recovery diode (trr = 170 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 165 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0746EJ0200 Rev.2.00 Jun 12, 2012
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
1. Gate 2. Collector 3. Emitter 4. Collector
.DataSheet.net/...
