RJH1CV7DPK
RJH1CV7DPK is manufactured by Renesas.
Preliminary Datasheet
1200V
- 35A
- IGBT Application: Inverter
R07DS0748EJ0300 Rev.3.00
Feb 14, 2013
Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)
- Built-in fast recovery diode (trr = 200 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 280 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
12 3
1. Gate 2. Collector G 3. Emitter 4....
