RJH1CV7DPQ-E0
RJH1CV7DPQ-E0 is manufactured by Renesas.
Preliminary Datasheet
1200V
- 35A
- IGBT Application: Inverter
Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)
- Built-in fast recovery diode (trr = 200 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0525EJ0400 Rev.4.00 Jan 19, 2012
Outline
RENESAS Package code: PRSS0003ZE-A (Package name: TO-247)
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
1 2
.DataSheet.net/...
