RJH1CV7DPQ-E0 Datasheet IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH1CV7DPQ-E0 1200V - 35A - IGBT Application:.

Datasheet Details

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 200 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0525EJ0400 Rev.4.00 Jan 19, 2012 Outline.