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RJH6087BDPK - High Speed Power Switching

General Description

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Key Features

  • Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load).
  • Low on-state voltage.
  • Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011 Outline.

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Datasheet Details

Part number RJH6087BDPK
Manufacturer Renesas
File Size 168.10 KB
Description High Speed Power Switching
Datasheet download datasheet RJH6087BDPK Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 www.DataSheet.