RJH6087BDPK Description
Preliminary Datasheet RJH6087BDPK Silicon N Channel IGBT High Speed Power Switching.
RJH6087BDPK Key Features
- Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load)
- Low on-state voltage
- Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011