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Preliminary Datasheet
RJH6087BDPK
Silicon N Channel IGBT High Speed Power Switching
Features
• Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0389EJ0100 Rev.1.00 May 11, 2011
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
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