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RJH60D6DPM Datasheet IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60D6DPM 600V - 40A - IGBT Application:.

Key Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode (100 ns typ. ) in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0175EJ0300 Rev.3.00 Apr 19, 2012 Outline.

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