RJH60T4DPQ-A0 Datasheet | Renesas

Preliminary Datasheet Silicon N Channel IGBT High Speed Power Switching Features - Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) - Built in fast recovery diode in one package - Trench gate and thin wafer technology - High speed switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) 4 G 1. Gate 2. Collector 3. Emitter 4. Collector 1 2 .DataSheet.net/...