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RJH60T4DPQ-A0 Datasheet High Speed Power Switching

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Outline.

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