RJH60V1BDPP-M0 Datasheet IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application:.

Datasheet Details

Short circuit withstand time (6 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (25 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0759EJ0100 Rev.1.00 May 25, 2011 Outline.