RJH60V1BDPP-M0
RJH60V1BDPP-M0 is manufactured by Renesas.
Preliminary Datasheet
600V
- 8A
- IGBT Application: Inverter
Features
- Short circuit withstand time (6 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (25 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0759EJ0100 Rev.1.00 May 25, 2011
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
1. Gate 2. Collector 3. Emitter
2 3
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