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RJK03A4DPA Datasheet Silicon N Channel Power Mos Fet

Manufacturer: Renesas

Overview: Preliminary RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0200 Power Switching Rev.2.

Datasheet Details

Part number RJK03A4DPA
Manufacturer Renesas
File Size 263.51 KB
Description Silicon N Channel Power MOS FET
Datasheet RJK03A4DPA_Renesas.pdf

Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.

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