RJK03A4DPA Datasheet | Renesas

Preliminary Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0200 Power Switching Rev.2.00 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V) - Pb-free - Halogen-free - - - - - Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2...