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RJL5012DPP - Silicon N Channel MOS FET

Features

  • Built-in fast recovery diode.
  • Low on-resistance.
  • Low leakage current.
  • High speed switching Outline.

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Datasheet preview – RJL5012DPP

Datasheet Details

Part number RJL5012DPP
Manufacturer Renesas
File Size 186.54 KB
Description Silicon N Channel MOS FET
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Full PDF Text Transcription

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RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current VGSS IDNote4 ID Note1 (pulse) Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C 4.
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