RJL5018DPK - Silicon N Channel MOS FET High Speed Power Switching

Renesas

Key Features

Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1817-0100 Rev.1.00 Sep 11, 2009 Outline.

RJL5018DPK silicon n channel mos fet high speed power switching by Renesas - Datasheet Preview

Datasheet Details

Part number	RJL5018DPK
Manufacturer	Renesas
File Size	191.93 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJL5018DPK Datasheet

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www.DataSheet4U.com RJL5018DPK Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1817-0100 Rev.1.00 Sep 11, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.