Datasheet4U Logo Datasheet4U.com

RJL5012DPE - N-Channel Power MOSFET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C).
  • Low leakage current.
  • High speed switching R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011 Outline.

📥 Download Datasheet

Datasheet preview – RJL5012DPE

Datasheet Details

Part number RJL5012DPE
Manufacturer Renesas
File Size 140.99 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RJL5012DPE Datasheet
Additional preview pages of the RJL5012DPE datasheet.

📁 Similar Datasheet

  • RJL5014DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJL5014DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJL5015DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJL5018DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJL5020DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJL-001 - Single 10/100 BASE-TX Filtered Connector Module (Taimag)
  • RJL6012DPE - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJL6013DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
  • RJL6014DPP - Silicon N Channel MOS FET (Renesas Technology)
  • RJL6015DPK - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S www.DataSheet.co.
Published: |