RJL5012DPE Overview
Key Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 °C)
- Low leakage current
- Drain 1 G 2 3 S
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| RJL5014DPK | Renesas | Silicon N Channel MOS FET High Speed Power Switching |
| RJL5014DPP | Renesas | Silicon N Channel MOS FET High Speed Power Switching |
| RJL5018DPK | Renesas | Silicon N Channel MOS FET High Speed Power Switching |
| RJL5015DPK | Renesas | Silicon N Channel MOS FET High Speed Power Switching |