RJL5012DPE Overview
Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching.
RJL5012DPE Key Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching