RJL5012DPE
RJL5012DPE is N-Channel Power MOSFET manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel MOS FET High Speed Power Switching
Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching
R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
G 2 3
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