RJL5013DPE Overview
Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching.
RJL5013DPE Key Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching