RJL5015DPK Overview
Datasheet RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching.
RJL5015DPK Key Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010