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RJL5015DPK - Silicon N Channel MOS FET High Speed Power Switching

Description

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Features

  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.23  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010 Outline.

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Datasheet Details

Part number RJL5015DPK
Manufacturer Renesas Technology
File Size 104.73 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet RJL5015DPK Datasheet
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Preliminary www.DataSheet4U.com Datasheet RJL5015DPK Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.23  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching REJ03G1912-0100 Rev.1.00 May 27, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
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