RJP1CS06DWT Overview
Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application:.
RJP1CS06DWT Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)
- High speed switching