RJP1CS06DWT Datasheet | Renesas

Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter Features - Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) - High speed switching - Short circuit withstands time (10 s min.) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012 Outline Die: RJP1CS06DWT-80 2 C 3 Wafer: RJP1CS06DWA-80 1G 1. Gate 2. Collector (The back) 3. Emitter E 3 .DataSheet.net/...