RJP1CS06DWT - IGBT

Product Overview

Renesas

Datasheet Details

Part number	RJP1CS06DWT
Manufacturer	Renesas
File Size	129.68 KB
Description	IGBT
Datasheet	RJP1CS06DWT Datasheet
Additional preview pages of the RJP1CS06DWT datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C).
High speed switching.
Short circuit withstands time (10 s min. ) R07DS0829EJ0002 Rev.0.02 Jul 05, 2012 Outline Die: RJP1CS06DWT-80 2 C 3 Wafer: RJP1CS06DWA-80 2 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.

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Published: Jul 21, 2012 |