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RJP1CS08DWA - IGBT

Download the RJP1CS08DWA datasheet PDF (RJP1CS08DWT included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for igbt.

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C).
  • High speed switching.
  • Short circuit withstands time (10 s min. ) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E 3 1. Gate 2. Collector (The back) 3. Emitter 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 10.

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Note: The manufacturer provides a single datasheet file (RJP1CS08DWT_Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Preliminary Datasheet RJP1CS08DWT/RJP1CS08DWA 1250V - 200A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0831EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP1CS08DWT-80 2 C Wafer: RJP1CS08DWA-80 3 2 3 1G 1 3 E 3 1. Gate 2. Collector (The back) 3. Emitter 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 1250 ±30 400 200 150 Unit V V A A C Notes: 1. This data is a regulated value in Package (at Tc = 25C). R07DS0831EJ0001 Rev.0.
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