RJP65S08DWT Datasheet | Renesas

Preliminary Datasheet RJP65S08DWT/RJP65S08DWA 650V - 200A - IGBT Application: Inverter Features - Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C) - High speed Switching - Short circuit withstands time (10 s min.) R07DS0825EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S08DWT-80 2 C Wafer: RJP65S08DWA-80 3 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 .DataSheet.net/...