Datasheet4U Logo Datasheet4U.com

RJP65T43DPM Datasheet High Speed Switching IGBT

Manufacturer: Renesas

📥 Download Datasheet

Overview

Datasheet RJP65T43DPM 650V - 20A - IGBT High Speed Switching R07DS1201EJ0200 Rev.2.00 Dec.01.

Key Features

  • Trench gate and thin wafer technology (G7H series).
  • Isolated package.
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C).
  • High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C).
  • Operation frequency (20 kHz ≤ f ≤ 100kHz).
  • Not guarantee short circuit withstand time.

More Datasheets from Renesas

Part Number Description
RJP65S03DWA IGBT
RJP65S03DWT IGBT
RJP65S05DWA IGBT
RJP65S05DWT IGBT
RJP65S06DWA IGBT
RJP65S06DWT IGBT
RJP65S07DWA IGBT
RJP65S07DWT IGBT
RJP65S08DWA IGBT
RJP65S08DWT IGBT