RJP65T43DPM Description
Datasheet RJP65T43DPM 650V - 20A - IGBT High Speed Switching R07DS1201EJ0200 Rev.2.00 Dec.01.2020.
RJP65T43DPM Key Features
- Trench gate and thin wafer technology (G7H series)
- Isolated package
- Low collector to emitter saturation voltage
- High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)
- Operation frequency (20 kHz ≤ f ≤ 100kHz)
- Not guarantee short circuit withstand time