RJP65T43DPM
RJP65T43DPM is High Speed Switching IGBT manufactured by Renesas.
650V
- 20A
- IGBT High Speed Switching
R07DS1201EJ0200 Rev.2.00
Dec.01.2020
Features
- Trench gate and thin wafer technology (G7H series)
- Isolated package
- Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)
- High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)
- Operation frequency (20 k Hz ≤ f ≤ 100k Hz)
- Not guarantee short circuit withstand time
- Applications: PFC
- Quality grade: Standard
Key Performance
Type RJP65T43DPM
VCES 650 V
IC 20 A
VCE(sat), TC=25°C 1.8 V
Tj 175 C
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
1. Gate
2. Collector
3. Emitter
R07DS1201EJ0200 Rev.2.00 Dec.01.2020
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