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RJP65T43DPM - High Speed Switching IGBT

Features

  • Trench gate and thin wafer technology (G7H series).
  • Isolated package.
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C).
  • High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C).
  • Operation frequency (20 kHz ≤ f ≤ 100kHz).
  • Not guarantee short circuit withstand time.

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Datasheet RJP65T43DPM 650V - 20A - IGBT High Speed Switching R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Features  Trench gate and thin wafer technology (G7H series)  Isolated package  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)  High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C)  Operation frequency (20 kHz ≤ f ≤ 100kHz)  Not guarantee short circuit withstand time  Applications: PFC  Quality grade: Standard Key Performance Type RJP65T43DPM VCES 650 V IC 20 A VCE(sat), TC=25°C 1.8 V Tj 175 C Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 123 1. Gate G 2. Collector 3. Emitter E R07DS1201EJ0200 Rev.2.00 Dec.01.
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