RQK0301FGDQS Description
RQK0301FGDQS Silicon N Channel MOS FET Power Switching.
RQK0301FGDQS Key Features
- Low on-resistance RDS(on) = 28 mΩ typ (VGS = 10 V, ID = 3 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- UPAK is a trademark of Renesas Technology Corp