RQK0302GGDQS Overview
RQK0302GGDQS Silicon N Channel MOS FET Power Switching.
RQK0302GGDQS Key Features
- Low on-resistance RDS(on) = 81 mΩ typ (VGS = 10 V, ID = 1.9 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- UPAK is a trademark of Renesas Technology Corp