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TP65H050G4BS - 650V SuperGaN FET

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Renesas

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TP65H050G4BS 650V SuperGaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H050G4BS

Datasheet Details

Part number	TP65H050G4BS
Manufacturer	Renesas
File Size	1.19 MB
Description	650V SuperGaN FET
Datasheet	TP65H050G4BS Datasheet
Additional preview pages of the TP65H050G4BS datasheet.

TP65H050G4BS Product details

Description

The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased efficiency in both har.

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Published: Jan 30, 2025 |