TP65H050G4BS Datasheet | Renesas

Specifications in this document are tentative and subject to change 650V SuperGaN® FET in TO-263 (source tab) Description The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Related Literature - Remended External Circuitry for GaN FETs -...