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TP65H050G4YS - 650V FET

Product Overview

Renesas

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TP65H050G4YS 650V FET by Renesas - Datasheet Preview — Datasheet preview – TP65H050G4YS

Datasheet Details

Part number	TP65H050G4YS
Manufacturer	Renesas
File Size	1.03 MB
Description	650V FET
Datasheet	TP65H050G4YS Datasheet
Additional preview pages of the TP65H050G4YS datasheet.

Product details

Description

The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased efficiency in both har.

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Published: Jan 18, 2025 |