TP65H050G4YS Overview
Key Specifications
Pins: 4
Max Operating Temp: 150 °C
Min Operating Temp: -55 °C
Description
The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
Key Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss Benefits
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
