Renesas Electronics TP65H050G4YS
The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.| Part No. | TP65H050G4YS |
|---|---|
| Datasheet | TP65H050G4YS Download |
| Manufacturer |  Renesas Electronics |
| Description | 650V FET |
| Buy | Stock & Price |
DESCRIPTION
Related Literature● Recommended External Circuitry for GaN FETs
● Printed Circuit Board Layout and Probing Ordering Information Part Number TP65H050G4YS Package 4 Lead TO-247 Package Configuration Source TP65H050G4YS TO-247 (top view)
FEATURES
● JEDEC-qualified GaN technology● Dynamic RDS(on)eff production tested
● Robust design, defined by — Wide gate safety margin — Transient over-voltage capability
● Enhanced inrush current capability
● Very low QRR
● Reduced crossover loss Benefits
● Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost
● Achieves increased efficiency in both hard- and soft-switched circuits
● Easy to drive with commonly-used gate drivers
● GSD pin layout improves high speed design
APPLICATIONS
● Datacom● Broad industrial
● PV inverter
● Servo motor D G KS S Cascode Schematic Symbol Cascode Device Structure Key Specifications VDSS (V) VDSS(TR)(V) RDS(on)eff (mΩ) max* 650...
