TP65H050BS Datasheet | Transphorm

650V GaN FET in TO-263 (source tab) Preliminary Datasheet Description The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. It bines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature - AN0009: Remended External Circuitry for GaN FETs - AN0003: Printed Circuit Board Layout and Probing - AN0010: Paralleling GaN FETs Ordering Information Part Number Package TO-263 Package Configuration mon...