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Data Sheet
μPA2690T1R
COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ
Description
The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS1000EJ0101 Rev.1.01 Mar 04, 2013
Features
• N-channel 2.5V, P-channel 1.8V drive available • Low on-state resistance N-channel ⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) ⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) P-channel ⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) ⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A) ⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.