Datasheet Summary
μPD48011318 μPD48011336
1.1G-BIT Low Latency DRAM-III mon I/O Burst Length of 2
R10DS0012EJ0200 Rev.2.00
Feb 01, 2013
Description The μPD48011318 is a 67,108,864-word by 18-bit and the μPD48011336 is a 33,554,432-word by 36-bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor eDRAM memory cell. The Low Latency DRAM-III chip is a 1.1Gbit DRAM capable of a sustained throughput of approximately 43.2 Gbps for burst length of 2 (approximately 51.2 Gbps for applications implementing error correction), excluding refresh overhead and data bus turn-around
With a bus speed of 600 MHz, a burst length of 2, and a tRC of 13.3 ns,...