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UPD5902T7K Datasheet CMOS Integrated Circuits High Power Spdt Switch

Manufacturer: Renesas

Overview: Preliminary Data Sheet μPD5902T7K CMOS Integrated Circuits High Power SPDT.

Datasheet Details

Part number UPD5902T7K
Manufacturer Renesas
File Size 189.00 KB
Description CMOS Integrated Circuits High Power SPDT Switch
Datasheet UPD5902T7K_Renesas.pdf

General Description

R09DS0046EJ0200 Rev.2.00 Nov 19, 2012 The μPD5902T7K is a CMOS MMIC SPDT (Single Pole Double Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm.

This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.

This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.

Key Features

  • Low control voltage : Vcont = 1.3 V MIN. , VDD = 2.3 V MIN. Low insertion loss : Lins = 0.35/0.40 dB TYP. @ f = 1.0/2.0 GHz High isolation : ISL = 45/37 dB TYP. @ f = 1.0/2.0 GHz High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2.0 GHz High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm) No DC blocking capacitors required.

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