Datasheet4U Logo Datasheet4U.com

UPD5904T7K Datasheet CMOS Integrated Circuits High Power Sp4t Switch

Manufacturer: Renesas

Overview: Preliminary Data Sheet μPD5904T7K CMOS Integrated Circuits High Power SP4T.

Datasheet Details

Part number UPD5904T7K
Manufacturer Renesas
File Size 227.19 KB
Description CMOS Integrated Circuits High Power SP4T Switch
Datasheet UPD5904T7K_Renesas.pdf

General Description

R09DS0045EJ0200 Rev.2.00 Dec 11, 2012 The μPD5904T7K is a CMOS MMIC SP4T (Single Pole Four Throw) switch for GSM and UMTS/LTE main Antenna switching and other High Power RF switching applications up to +35 dBm.

This device can operate frequency from 0.05 to 6.0 GHz, having low insertion loss and high isolation.

This device is housed in a 12-pin plastic QFN (Quad Flat Non-Leaded) (T7K) package.

Key Features

  • Low control voltage.
  • Low insertion loss.
  • : Vcont = 1.3 V MIN. ,VDD = 2.3 V MIN. : Lins = 0.4 dB TYP. @ f = 1 GHz : Lins = 0.5 dB TYP. @ f = 2 GHz High isolation : ISL = 35 dB TYP. @ f = 1 GHz : ISL = 30 dB TYP. @ f = 2 GHz High Handling power : Pin (0.1dB) = +38 dBm TYP. @f = 0.9/2 GHz High-density surface mounting : 12-pin plastic QFN (T7K) package (2.0 × 2.0 × 0.6 mm) No DC blocking capacitors required.

More Datasheets from Renesas

Part Number Description
UPD5902T7K CMOS Integrated Circuits High Power SPDT Switch
UPD5201 Quad SPST CMOS analog switch
UPD5713TK WIDE BAND SPDT SWITCH
UPD5739T7A SiGe CMOS
UPD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER
UPD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER
UPD5750T7D SiGe BiCMOS
UPD5753T7G SiGe BiCMOS
UPD5754T7A SiGe BiCMOS
UPD5756T6N SiGe BiCMOS

UPD5904T7K Distributor