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uPD16818 - MONOLITHIC DUAL H-BRIDGE DRIVER

General Description

The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage.

Key Features

  • Compatible with 3V-/5V- supply voltage.
  • Pin compatible with µPD16803.
  • Low ON resistance (sum of ON resistors of top and bottom MOS FETs) RON1= 1.2 Ω (VM = 3.0 V) RON2 = 1.0 Ω (VM = 5.0 V).
  • Low current consumption: IDD = 0.4 mA TYP. (VDD = 2.7 V to 3.6 V).
  • Stop mode function that turns OFF all output MOS FETs.
  • Drive current can be set in power-saving mode (set by external resistor).
  • Compact surface mount package.

📥 Download Datasheet

Datasheet Details

Part number uPD16818
Manufacturer Renesas
File Size 165.40 KB
Description MONOLITHIC DUAL H-BRIDGE DRIVER
Datasheet download datasheet uPD16818 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD16818 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. In addition, the drive current can be adjusted by an external resistor in power-saving mode. The µPD16818 is therefore ideal as the driver circuit of a 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD.