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uPD46364362B - 36M-BIT DDR II SRAM 2-WORD BURST OPERATION

This page provides the datasheet information for the uPD46364362B, a member of the uPD46364092B 36M-BIT DDR II SRAM 2-WORD BURST OPERATION family.

Datasheet Summary

Description

The μPD46364092B is a 4,194,304-word by 9-bit, the μPD46364182B is a 2,097,152-word by 18-bit and the μPD46364362B is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Features

  • 1.8 ± 0.1 V power supply.
  • 165-pin.

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Datasheet Details

Part number uPD46364362B
Manufacturer Renesas
File Size 583.69 KB
Description 36M-BIT DDR II SRAM 2-WORD BURST OPERATION
Datasheet download datasheet uPD46364362B Datasheet
Additional preview pages of the uPD46364362B datasheet.

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Other Datasheets by Renesas
  • uPD46364365B - 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
  • uPD46364092B - 36M-BIT DDR II SRAM 2-WORD BURST OPERATION
  • uPD46364182B - 36M-BIT DDR II SRAM 2-WORD BURST OPERATION
  • uPD46364185B - 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
  • uPD46365084B - 36M-BIT QDR II SRAM 4-WORD BURST OPERATION
  • uPD46365092B - 36M-BIT QDR II SRAM 2-WORD BURST OPERATION
  • uPD46365094B - 36M-BIT QDR II SRAM 4-WORD BURST OPERATION
  • uPD46365182B - 36M-BIT QDR II SRAM 2-WORD BURST OPERATION

Full PDF Text Transcription

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μPD46364092B μPD46364182B μPD46364362B Datasheet 36M-BIT DDR II SRAM 2-WORD BURST OPERATION R10DS0091EJ0400 Rev.4.00 Nov 09, 2012 Description The μPD46364092B is a 4,194,304-word by 9-bit, the μPD46364182B is a 2,097,152-word by 18-bit and the μPD46364362B is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46364092B, μPD46364182B and μPD46364362B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration.
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