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uPD46364365B - 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION

Download the uPD46364365B datasheet PDF. This datasheet also covers the uPD46364185B variant, as both devices belong to the same 36m-bit ddr ii sram separate i/o 2-word burst operation family and are provided as variant models within a single manufacturer datasheet.

General Description

The μPD46364185B is a 2,097,152-word by 18-bit and the μPD46364365B is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

Key Features

  • 1.8 ± 0.1 V power supply.
  • 165-pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (uPD46364185B-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number uPD46364365B
Manufacturer Renesas
File Size 550.00 KB
Description 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION
Datasheet download datasheet uPD46364365B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
μPD46364185B μPD46364365B Datasheet 36M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION R10DS0092EJ0400 Rev.4.00 Nov 09, 2012 Description The μPD46364185B is a 2,097,152-word by 18-bit and the μPD46364365B is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46364185B and μPD46364365B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features • 1.