H7N1004AB Description
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007.
H7N1004AB Key Features
- Low on-resistance RDS (on) =25 mΩ typ
- Low drive current
- Available for 4.5 V gate drive
- Part: H7N1004AB
- Manufacturer: Renesas (official site)
- Size: 144.77 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| H7N1004DL | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004DS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004FM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004FN | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004LD | (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching |