HAT2285WP Description
Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0310 Rev.3.10 May 13, 2010.
HAT2285WP Key Features
- Low on-resistance
- Capable of 4.5 V gate drive
- High density mounting
- Built-in Schottky Barrier Diode