RJK0383DPA Description
RJK0383DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1723-0101 Preliminary Rev.1.01 Jul 10, 2008.
RJK0383DPA Key Features
- Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free