RJK6024DP3-A0 Description
RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching.
RJK6024DP3-A0 Key Features
- Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
- Low leakage current
- High speed switching
- Part: RJK6024DP3-A0
- Manufacturer: Renesas (official site)
- Size: 143.04 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJK6024DPD | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6020DPK | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6022DJE | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6026DPP | Silicon N Channel MOSFET High Speed Power Switching |