2SB1730 - General purpose Transistors

ROHM

Key Features

1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤.
180mV at IC=.
1A / IB=.
50mA 0.2 1.7 2.1 0.2 0.17 0~0.1 0.15Max. 0.77 0.65 0.65 1.3 zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SB1730 Taping TL 3000 ROHM : TUMT3 Abbreviated symbol : FV (1) Base (2) Emitter (3) Collector zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector.

2SB1730 general purpose transistors by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1730
Manufacturer	ROHM
File Size	82.86 KB
Description	General purpose Transistors
Datasheet	2SB1730 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB173	Ge PNP Alloy Junction Transistor	ETC
2SB1734	Silicon PNP epitaxial planar type Transistor	Panasonic Semiconductor
2SB1739	/ NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SB170	Ge PNP Alloy Junction Transistor	ETC
2SB1700	PNP/NPN Epitaxial Planar Silicon Darlington Transistors	Sanyo Semicon Device

Other Datasheets by ROHM

Part Number	Description
2SB1731	Low frequency amplifier
2SB1732	Genera purpose Transistors
2SB1733	PNP Middle Power Transistor
2SB1705	Low frequency amplifier
2SB1706	LOW FREQUENCY AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.DataSheet4U.com 2SB1730 Transistors General purpose amplification(−12V, −2A) 2SB1730 zApplications Low frequency amplifier Deiver zExternal dimensions (Unit : mm) (2) 0.3 2.0 0.85Max. (3) (1) zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −180mV at IC= −1A / IB= −50mA 0.2 1.7 2.1 0.2 0.17 0~0.1 0.15Max. 0.77 0.65 0.65 1.