2SB1731 - Low frequency amplifier

ROHM

Key Features

1) A collector current is large. 2) VCE(sat) ≤.
370mV at IC =.
1A / IB =.
50mA ROHM : TUMT3 (1) 0.2 0.85Max. 0.17 0~0.1 0.15Max. Abbreviated symbol : FL 0.77 2.0 (3) 0.65 0.65 1.3 (1)Base (2)Emitter (3)Collector zAbsolute maximum ratings (Ta=25°C) Limits Symbol VCBO.
30 VCEO.
30 VEBO.
6 IC.
1.5 Collector current ICP.
3 400 PC Power dissipation Tj 150 Junction temperature Tstg Range of storage temperature.
55 to +150.

2SB1731 low frequency amplifier by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1731
Manufacturer	ROHM
File Size	74.68 KB
Description	Low frequency amplifier
Datasheet	2SB1731 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB173	Ge PNP Alloy Junction Transistor	ETC
2SB1734	Silicon PNP epitaxial planar type Transistor	Panasonic Semiconductor
2SB1739	/ NPN Epitaxial Planar Silicon Transistors	Sanyo Semicon Device
2SB170	Ge PNP Alloy Junction Transistor	ETC
2SB1700	PNP/NPN Epitaxial Planar Silicon Darlington Transistors	Sanyo Semicon Device

Other Datasheets by ROHM

Part Number	Description
2SB1730	General purpose Transistors
2SB1732	Genera purpose Transistors
2SB1733	PNP Middle Power Transistor
2SB1705	Low frequency amplifier
2SB1706	LOW FREQUENCY AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SB1731 Transistors Low frequency amplifier 2SB1731 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) (2) 0.3 0.2 1.7 2.1 zFeatures 1) A collector current is large. 2) VCE(sat) ≤−370mV at IC =−1A / IB =−50mA ROHM : TUMT3 (1) 0.2 0.85Max. 0.17 0~0.1 0.15Max. Abbreviated symbol : FL 0.77 2.0 (3) 0.65 0.65 1.3 (1)Base (2)Emitter (3)Collector zAbsolute maximum ratings (Ta=25°C) Limits Symbol VCBO −30 VCEO −30 VEBO −6 IC −1.