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2SB1732 - Genera purpose Transistors

Key Features

  • 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤.
  • 200mV at IC =.
  • 500mA / IB =.
  • 25mA (1) (2) 0.65 0.65 1.3 2.0 zExternal dimensions (Unit : mm) (3) 0.2 1.7 0.2 2.1 0.17 0.3 0~0.1 0.77 0.85Max. 0.15Max. ROHM : TUMT3 Abbreviated symbol : EV (1)Base (2)Emitter (3)Collector zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current.

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Datasheet Details

Part number 2SB1732
Manufacturer ROHM
File Size 91.19 KB
Description Genera purpose Transistors
Datasheet download datasheet 2SB1732 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SB1732 Genera purpose amplification(−12V, −1.5A) 2SB1732 zApplication Low frequency amplifier Driver zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ −200mV at IC = −500mA / IB = −25mA (1) (2) 0.65 0.65 1.3 2.0 zExternal dimensions (Unit : mm) (3) 0.2 1.7 0.2 2.1 0.17 0.3 0~0.1 0.77 0.85Max. 0.15Max. ROHM : TUMT3 Abbreviated symbol : EV (1)Base (2)Emitter (3)Collector zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC ICP Power dissipation PC Junction temperature Tj Range of storage temperature Tstg ∗1Single pulse, PW=1ms ∗2Each Terhinal Mounted on a Recommended Land Limits −15 −12 −6 −1.