2SC5865
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Transistors
High voltage discharge, High speed switching, Low Noise (60V, 1A)
2SC5865 z Features 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) 2) Low saturation voltage, typically. (Typ. : 200m V at IC = 500m A, IB = 50m A) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) plements the 2SA2092. z Dimensions (Unit : mm)
TSMT3
2.9 0.4
(3)
1.6 2.8
1.0MAX 0.85 0.7
0~0.1
0.3~0.6
(1)
(2)
0.95 0.95 z Applications High speed switching, Low noise
(1) Base (2) Emitter (3) Collector
Each lead has same dimensions
Abbreviated symbol : VU z Structure NPN silicon epitaxial planar transistor z Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SC5865 Taping TL 3000 z Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg...
