Datasheet4U Logo Datasheet4U.com

2SC5866 - Medium power transistor

Datasheet Summary

Features

  • 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 0.16 0.1 (1)Base (2)Emitter (3)Collector 0.3 0.6 Each lead has same dimensions Abbreviated symbol : VL !.

📥 Download Datasheet

Datasheet preview – 2SC5866

Datasheet Details

Part number 2SC5866
Manufacturer ROHM
File Size 39.31 KB
Description Medium power transistor
Datasheet download datasheet 2SC5866 Datasheet
Additional preview pages of the 2SC5866 datasheet.

📁 Similar Datasheet

  • 2SC5863 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC5800 - NPN SILICON RF TRANSISTOR (Renesas)
  • 2SC5801 - NPN TRANSISTOR (NEC)
  • 2SC5802 - Silicon NPN Power Transistors (SavantIC)
  • 2SC5802 - NPN Transistor (INCHANGE)
  • 2SC5803 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
  • 2SC5804 - SMALL-SIGNAL TRANSISTOR (Isahaya Electronics Corporation)
  • 2SC5807 - Silicon NPN Transistor (Isahaya Electronics Corporation)
  • 2SC5808 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC5809 - Silicon NPN Transistor (Panasonic Semiconductor)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
2SC5866 Transistor Medium power transistor (60V, 2A) 2SC5866 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 0.16 0.1 (1)Base (2)Emitter (3)Collector 0.3 0.
Published: |