ROHM Semiconductor 2SC5866
Medium power transistor
| Part No. | 2SC5866 |
|---|---|
| Datasheet | 2SC5866 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Medium power transistor |
| Buy | Stock & Price |
FEATURES
1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 0.16 0.1 (1)Base (2)Emitter (3)Collector 0.3 0.6 Each lead has same dimensions Abbreviated symbol : VL !APPLICATIONS
Low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SC5866 Taping TL 3000 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 60 60 6 2 4 500 150 −55~+150 Unit V V V A A mW °C °C ∗1...
