ROHM Semiconductor 2SC5868
Medium power transistor
FEATURES
1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090●
APPLICATIONS
Small signal low frequency amplifier High speed switching●Dimensions (Unit : mm) TSMT3 2.8 1.6 (3) 0.4 2.9 1.9 0.95 0.95 (1) 0.7 0.85 1.0MAX 0.16 (2) (1) Base (2) Emitter (3) Collector 0 0.1 0.3 0.6 Each lead has same dimensions Abbreviated symbol : VS
●Structure NPN Silicon epitaxial planar transistor
●Packaging specifications Type 2SC5868 Package Code Basic ordering unit (pieces) Taping TL 3000
●Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 60 60 6 0.5 1.0 500 150 −55 to 150 Unit V V V A A mW ∗1 ∗2 °C °C ○c 2011 ROHM Co., Ltd.