2SD2678 Datasheet PDF

2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 250mV at IC = 1.5A, IB = 30mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zStructure NPN epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XX zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 15 12 6 3 6 0.5 2 150 −55 to +150 ∗1 ∗2 ∗3 zPackaging specifications Unit V V Package Packaging type Code Part No. 2SD2678 Basic ordering unit (pieces) MPT3 Taping T100 1000 V A W °C °C ∗1 Pw=1ms, Pulsed. ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40×40×0.7mm ceramic board. zElectri...