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2SD2679 - Bipolar transistor

Datasheet Summary

Features

  • 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 350mV at IC = 1.5A, IB = 75mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zStructure NPN epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XZ zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol V.

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Datasheet Details

Part number 2SD2679
Manufacturer ROHM
File Size 122.75 KB
Description Bipolar transistor
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Full PDF Text Transcription

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2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 350mV at IC = 1.5A, IB = 75mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zStructure NPN epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XZ zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 2 4 0.5 2 150 −55 to +150 ∗1 ∗2 ∗3 zPackaging specifications Unit V V www.
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