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QH8KA2 Datasheet PDF

ROHM Semiconductor QH8KA2

MOSFET

Part No. QH8KA2
Datasheet QH8KA2 Download
Manufacturer
ROHM Semiconductor
Description MOSFET
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QH8KA2 datasheet page 1 preview
QH8KA2 30V Nch + Nch Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 35mΩ ±4.5A 1.5W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline TSMT8 lInner circuit Datasheet lApplication Switching Motor Drive lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 180 8 3000 TCR KA2 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID ±4.5 A Pulsed drain current IDP*1 ±12 A Gate - Source voltage VGSS ±20 V Avalanche current, single pulse IAS*2 4.5 A Avalanche energy, single pulse EAS*2 1.5 mJ Power dissipation (total) PD*3 1.5 W PD*4 1.1 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2018 ROHM Co., Ltd. All rights reserved. 1/11 20180608 - Rev.003 QH8KA2 lThermal resistance Parameter Thermal resistance, junction - ambient (total) Datasheet Symbol RthJA*3 RthJA*4 Values Unit Min.
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