QH8KA4 Datasheet PDF

QH8KA4 30V Nch+Nch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 17.0mΩ ±9.0A 1.5W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. 5) 100% avalanche tested. lOutline TSMT8 lInner circuit Datasheet lApplication Switching Battery lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 180 8 3000 TCR KA4 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current Pulsed drain current ID ±9.0 A IDP*1 ±40 A Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse VGSS IAS*2 EAS*2 ±12 V 9.0 A 6.2 mJ Power dissipation total element 1.5 PD*3 1.25 W total PD*4 1.1 Junction temperature Tj 150 ℃ Operating junction and storage temperature