QH8KA3 Datasheet PDF

QH8KA3 Nch + Nch 30V 9.0A Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 16.0mΩ ±9.0A 2.6W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline TSMT8 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 180 8 3000 TCR KA3 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) <Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID*1 ±9.0 A Pulsed drain current IDP*2 ±18 A Gate - Source voltage VGSS ±20 V Avalanche current, single pulse IAS*3 7.0 A Avalanche energy, single pulse EAS*3 3.5 mJ Power dissipation (total) PD*1 2.6 W PD*4 1.5 Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190314 - Rev.002 QH8KA3 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*4 Values Unit Min.