ROHM Semiconductor RB160L
Schottky barrier diode
| Part No. | RB160L |
|---|---|
| Datasheet | RB160L Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
RB160L-40 Diodes Schottky barrier diode RB160L–40 zApplications High frequency rectification For switching power supply. zExternal dimensions (Units : mm) 1.5±0.2 CATHODE MARK 1.2±0.3 4.5±0.2 zFeatures 1) Compact power mold type (PMDS) 2) Low IR. (IR=5mA Typ.) 3) High reliability 3 4 0.1 +0.02 −0.1 2.6±0.2 2.0±0.2 zConstruction Silicon epitaxial Planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 ,
●●●● Date of manufacture EX. 1999. 12 →9, C zAbsolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Peak forward surge current Junction temperature Storage temperature ∗When mounted on a PCBs board Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 1 70 125 −40~+125 Unit V V A A °C °C zElectrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.55 0.1 Unit V mA IF = 1.0A VR = 40V Conditions 5.0±0.3 RB160L-40 Diodes zElectrical characteristic curves (Ta = 25°C) CAPACITANCE BETWEEN TERMINALS :...
●●●● Date of manufacture EX. 1999. 12 →9, C zAbsolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Peak forward surge current Junction temperature Storage temperature ∗When mounted on a PCBs board Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 1 70 125 −40~+125 Unit V V A A °C °C zElectrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. − − Typ. − − Max. 0.55 0.1 Unit V mA IF = 1.0A VR = 40V Conditions 5.0±0.3 RB160L-40 Diodes zElectrical characteristic curves (Ta = 25°C) CAPACITANCE BETWEEN TERMINALS :...
