1) Small surface mounting (UMD4) 2) Low IR. (IR=0.3µA Typ. ) 3) This is a composite component and is ideal for reducing the number of components used. 4) High reliability. 1.25±0.1 0.6 0.65 0.3±0.1
1.25±0.1
1.25±0.1
2.1±0.1
2.1±0.1
0∼0.1
RB480K
Diodes
!Electrical characteristics (Ta=25°C)
Parameter Forward voltage Symbol VF1 VF2 IR1 Reverse current IR2 Ct1 Capacitance between terminals Ct2 Min.
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RB480K
Diodes
Shottky barrier diode
RB480K
!Applications Low current rectification !External dimensions (Units : mm)
2.0±0.2
0.9±0.1 0.7 0.2±0.1 0.25±0.1 0∼0.1 1pin MARK
2.0±0.2 1.3±0.1 0.65 0.65 0.25±0.1
0.9±0.1 0.7
0.1Min.
0.2±0.1 0.65 0.65 1.3±0.1
0.2±0.1 0.15±0.05
0.25±0.1 0.65 0.65 1.3±0.1
0.25±0.1 0.15±0.05
!Construction Silicon epitaxial planar
ROHM: UMD4 EIAJ: SC-82 JEDEC: SOT-343
∗There are two different markings.
!Circuit
!Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature
∗60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 45 40 0.1 1 125 −40∼+125
Unit V V A A ˚C ˚C
0.1Min.
3T
3T
!Features 1) Small surface mounting (UMD4) 2) Low IR.
RB480 Datasheet
