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RB495D
Diodes
Schottky barrier diode
RB495D
!Applications Low current rectification !External dimensions (Units : mm)
2.9±0.2 1.9±0.2 +0.2 −0.1 0.8±0.1
1.1
1.6
0.4
(All leads have same dimensions)
!Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346
!Circuit
!Absolute maximum ratings (Ta = 25°C)
Parameter Peak reverse voltage DC reverse voltege Mean rectifying current∗1 Peak forward surge current∗2 Junction temperature Storage temperature Operating temperture
∗1 Mean output current per element : IO / 2 ∗2 60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg Topr
Limits 40 25 0.4 2 125
Unit V V A A
°C °C °C
−40~+125 −30~+85
!Electrical characteristics (Ta = 25°C)
Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. − − − Max. 0.30 0.