Overview: RB495D
Diodes Schottky barrier diode
RB495D
!Applications Low current rectification !External dimensions (Units : mm)
2.9±0.2 1.9±0.2 +0.2 −0.1 0.8±0.1 1.1 1.6 0.4 (All leads have same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta = 25°C)
Parameter Peak reverse voltage DC reverse voltege Mean rectifying current∗1 Peak forward surge current∗2 Junction temperature Storage temperature Operating temperture
∗1 Mean output current per element : IO / 2 ∗2 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Topr Limits 40 25 0.4 2 125 Unit V V A A °C °C °C −40~+125 −30~+85 !Electrical characteristics (Ta = 25°C)
Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. − − − Max. 0.30 0.50 70 Unit V V µA IF=10mA IF=200mA VR=25V Conditions Note) ESD sensiteve product handling required. 0.3~0.6 D3Q !