Full PDF Text Transcription for RB531XN (Reference)
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RB531XN. For precise diagrams, and layout, please refer to the original PDF.
ons (Unit : mm) 2.0±0.2 1.3±0.1 0.65 0.65 0.9±0.1 0.7 0.1Min. 1.25±0.1 2.1±0.1 (4) (5) !Construction Silicon epitaxial planar ROHM : UMD6 EIAJ : SOT-363 JEDEC : !Absolute maximum ratings (Ta=25°C) Parameter DC reverse voltage Mean rectifying current ∗1 Peak forward surge curren ∗2 Junction temperature Storage temperature ∗1 Rating of per diode. ∗2 60Hz for 1 Symbol VR IO IFSM Tj Tstg Limits 30 100 1 125 −40 to +125 Unit V mA A °C °C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. − − − Max. 0.300 0.430 20 Unit V V µA IF=10mA IF=100mA VR=10V Note) Please pay