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RB550EA - Schottky barrier diode

Key Features

  • 1) Small mold type. (TSMD5) 2) Low VF, low IR. 3) High reliability. (5) (4) 0.45 0.35 2.8±0.2 ＋0.2 －0.1 0.7 0.35 0.45 1.6 0～0.1 0.3～0.6 0.95 TSMD5 0.95 1.9 (1) 0.95 (2) 0.95 (3) 0.33±0.03 0.7±0.1 0.85±0.1 1.0Max 1.9±0.2 zStructure zConstruction Silicon epitaxial planar ROHM : TSMD5 dot(year week factory) + day z Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 1.75±0.1 3.5±0.05 3.2±0.08 8.0±0.2 3.2±0.08 4.0±0.1 φ1.1±0.1 0～0.5 5.5±0.2 3.2±0.08 1.1±0.

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Datasheet Details

Part number RB550EA
Manufacturer ROHM
File Size 205.23 KB
Description Schottky barrier diode
Datasheet download datasheet RB550EA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com RB550EA Diodes Schottky barrier diode RB550EA zApplications Low current rectification z External dimensions (Unit : mm) 2.9±0.1 0.4　－0.05 Each lead has same dimension ＋0.1 z Land size figure (Unit : mm) 0.8 1.0 min. 0.16±0.1 0.06 zFeatures 1) Small mold type. (TSMD5) 2) Low VF, low IR. 3) High reliability. (5) (4) 0.45 0.35 2.8±0.2 ＋0.2 －0.1 0.7 0.35 0.45 1.6 0～0.1 0.3～0.6 0.95 TSMD5 0.95 1.9 (1) 0.95 (2) 0.95 (3) 0.33±0.03 0.7±0.1 0.85±0.1 1.0Max 1.9±0.2 zStructure zConstruction Silicon epitaxial planar ROHM : TSMD5 dot(year week factory) + day z Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 1.75±0.1 3.5±0.05 3.2±0.08 8.0±0.2 3.2±0.08 4.0±0.1 φ1.1±0.1 0～0.5 5.5±0.2 3.2±0.08 1.1±0.