Datasheet4U Logo Datasheet4U.com

RB751VM-40 - Schottky Barrier Diode

Key Features

  • 1)Ultra small mold type. (UMD2) 2)Low IR 3)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) 0.7±0.2 　　　 0.1 UMD2 lStructure lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak.

📥 Download Datasheet

Datasheet Details

Part number RB751VM-40
Manufacturer ROHM
File Size 976.38 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB751VM-40 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RB751V 30mA Surface Mount Small Signal Diodes CITC
RB751V-40 Silicon Epitaxial Planar Schottky Barrier Diode JGD
RB751V-40 SMD Schottky Barrier Diodes Comchip
RB751V-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP
RB751V-40 Schottky Barrier Diode MCC

Other Datasheets by ROHM

Part Number Description
RB751VM-40FH Schottky Barrier Diode
RB751V-40 Schottky barrier diode
RB751V-40FH Schottky barrier diode
RB751CS-40 Schottky barrier diode
RB751CS-40FH Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet Schottky Barrier Diode RB751VM-40 lApplications High speed switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 lFeatures 1)Ultra small mold type. (UMD2) 2)Low IR 3)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) 0.7±0.2 　　　 0.1 UMD2 lStructure lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz1cyc) Junction temperature IFSM Tj Storage temperature Tstg 1.40±0.1 4.0±0.