RB751VM-40 Datasheet PDF

Data Sheet Schottky Barrier Diode RB751VM-40 lApplications High speed switching lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 0.05 lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 lFeatures 1)Ultra small mold type. (UMD2) 2)Low IR 3)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) 0.7±0.2 0.1 UMD2 lStructure lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 lAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz●1cyc) Junction temperature IFSM Tj Storage temperature Tstg 1.40±0.1 4.0±0.1 φ 1.05 Limits 40 30 30 200 150 -40 to +150 Unit V V mA mA °C °C 1.0±0.1 lElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current VF IR - - 0.37 - 0.5 Capacitance between terminals Ct - 2 - Unit Conditions V IF=1mA μA VR=30V pF VR=1V , f=1MHz © 2011 ROHM Co., Ltd.